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Environmentally Friendly Semiconductor Cleaning
Device Became a Reality.
SHARP MANUFACTURING SYSTEMS CORPORATION Has Developed
High Temperature/High Concentration Ozone Water Generating Devices.
SHARP MANUFACTURING
SYSTEMS CORPORATION has developed a high temperature/high concentration
ozone water generating device designed for semiconductors. It allows you
to replace chemical solutions, such as sulfuric acid solutions, used in
semiconductor manufacturing processes in large quantities with ozone water,
which enables manufacturing semiconductors with no or with extremely small
amount of chemical solutions.
A large amount
of chemical solution is used when manufacturing semiconductors. However,
thanks to the environmentally friendly activities of recent years, the amount
of chemical solutions used per unit area for silicon is decreasing by optimizing
the concentration of chemical solutions or recycling used chemical solutions.
This device is designed to radically reduce the amount of such chemical
solutions to be used. The used ozone water will be resolved into oxygen
and water and no damage will be caused to the environment.
In order to solve
the problem of the poor process capacity of the conventional cleaning methods
using the conventional ozone water, we have developed our unique technologies
as described below, utilizing our own manufacturing technologies for cleaning
devices and the semiconductor technologies within the Sharp group. The following
technologies provide practical cleaning processes even in a resist stripping
process where the cleaning efficiency becomes poor with the conventional
ozone water, by cleaning semiconductor substrates with a supersaturated
concentration of high temperature/high concentration ozone water. Moreover,
we can expect that the ozone water of high purity generated from pure water
and high purity gas can be deployed for miniaturization.
Photo: Overview of the High Temperature/High Concentration
Ozone Water Generating Device |
| Key Points of the Developed Technologies (Patent Pending) |
| 1. |
The technology to generate a supersaturated concentration of high
temperature/high concentration ozone water. |
| 2. |
The technology to deliver ozone water to the substrate surfaces
maintaining a high concentration. |
| 3. |
The technology to quickly replace the ozone water after reaction
on the substrate surfaces and continuously supply fresh ozone water. |
| <Features of the High Temperature/High Concentration
Ozone Water Generating Device> |
| 1. |
The technology to generate a supersaturated concentration of
high temperature/high concentration ozone water.
| * |
When a surplus thermal energy is supplied to ozone water,
ozone molecules in a solution will be dissolved into oxygen.
We have developed a mechanism that can raise the ozone water
temperature to the required temperature in a short time while
minimizing the self-decomposition of the ozone molecules in
the solution. (Figure 1)
Figure 1: Conceptual Diagram of the
High Temperature/High Concentration Ozone Water Generating
Device
|
|
|
| 2. |
The technology to deliver ozone water to the substrate surfaces
maintaining a high concentration.
| * |
Supersaturated ozone water is thermodynamically in a nonequilibrium
state and the ozone water concentration will be reduced to the
saturating and dissolving concentration over time. We have developed
a piping system that extremely reduces the decrease in ozone
concentration so that you can use supersaturated high temperature/high
concentration ozone water.
|
|
| 3. |
The technology to quickly replace the ozone water after reaction
on the substrate surfaces and continuously supply fresh ozone water.
| * |
We have developed a combined structure that has our proprietary
nozzles and substrate rotating mechanism in order to supply
high concentration ozone water over substrate surfaces. |
|
<Future Deployment of the Device>
We will incorporate this newly developed device into the semiconductor cleaning
device that is now being developed in cooperation with a semiconductor device
manufacture. This process with high concentration ozone water will be used
as the resist stripping device (patent pending in cooperation with AQUA
SCIENCE CO. LTD.) after the high concentration ion implantation process
combined with the pre-process using radicals to be generated, and as the
cleaning device of the pre-and-post process of the oxide film removing device
combined with the dry cleaning device using HF gas plasma. (Figure 2)
Figure 2: Application Example for Environmentally
Friendly Devices
 |
We also plan to deploy high temperature/high concentration ozone water for
nonsemiconductor purposes, utilizing the effects of ozone, such as its disinfection,
deodorization, organic matter decomposition effects and our newly developed
technologies.
The resist stripping device after high concentration ion implantation processes
that incorporates the high temperature/high concentration ozone water generating
device will be exhibited in a joint booth of AQUA SCIENCE CO. LTD. in the
SEMICON Japan 2007 to be held from the 5th (Wed) to 7th (Fri) of November.
The device will be on the market in 2008.
We expect to sell 10 devices from 2008, and 70 devices by the end of 2010.
<Contact Information on this Matter>
SHARP MANUFACTURING SYSTEMS CORPORATION
Hiroaki Segawa, General Manager of Engineering Dept.4
E-mail: segawa.hiroaki@sharp.co.jp |
News Release
| Name |
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03 December 2007 |
1,139KB |
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